Light emitting device for display and display apparatus having the same

ABSTRACT

A light emitting module including a circuit board and a lighting emitting device thereon and including first, second, and third LED stacks each including first and second conductivity type semiconductor layers, a first bonding layer between the second and third LED stacks, a second bonding layer between the first and second LED stacks, a first planarization layer between the second bonding layer and the third LED stack, a second planarization layer on the first LED stack, a lower conductive material extending along sides of the first planarization layer, the second LED stack, the first bonding layer, and electrically connected to the first conductivity type semiconductor layers of each LED stack, respectively, and an upper conductive material between the circuit board and the lower conductive material, in which a width of an upper end of the upper conductive material is greater than a width of the corresponding upper conductive material.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.17/096,289, filed on Nov. 12, 2020, which claims priority from thebenefit of U.S. Provisional Application No. 62/935,741, filed on Nov.15, 2019, each of which is hereby incorporated by reference for allpurposes as if fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the invention relate generally to a lightemitting device for a display and a display apparatus, and, moreparticularly, to a light emitting device having a stack structure ofLEDs for a display and a display apparatus including the same.

Discussion of the Background

As an inorganic light source, light emitting diodes have been used invarious fields including displays, vehicular lamps, general lighting,and the like. With various advantages of light emitting diodes overconventional light sources, such as longer lifespan, lower powerconsumption, and rapid response, light emitting diodes have beenreplacing conventional light sources.

Light emitting diodes have been generally used as backlight lightsources in display apparatuses. However, LED displays that directlydisplay images using the light emitting diodes have been recentlydeveloped.

In general, a display apparatus realizes various colors through mixtureof blue, green, and red light. In order to display various images, thedisplay apparatus includes a plurality of pixels each having sub-pixelscorresponding to blue, green and red light, respectively. In thismanner, a color of a certain pixel is determined based on the colors ofthe sub-pixels so that images can be displayed through combination ofsuch pixels.

Since LEDs can emit various colors depending upon materials thereof, adisplay apparatus may be provided by arranging individual LED chipsemitting blue, green, and red light on a two-dimensional plane. However,when one LED chip is arranged in each sub-pixel, the number of LED chipsmay be increased, which may require excessive time for a mountingprocess during manufacture.

Moreover, when the sub-pixels are arranged on a two-dimensional plane inthe display apparatus, a relatively large area is occupied by one pixelthat includes the sub-pixels for blue, green, and red light.Accordingly, an area of each LED chip may need to be reduced to arrangethe sub-pixels in a restricted area. However, reduction in size of LEDchips may cause difficulty in mounting the LED chips, as well asreducing luminous areas of the LED chips.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

Light emitting devices for a display constructed according to exemplaryembodiments of the invention are capable of increasing an area of eachsub-pixel in a restricted pixel area and a display apparatus includingthe same.

Exemplary embodiments also provide a light emitting device for a displaythat is capable of reducing a time for a mounting process and a displayapparatus including the same.

Exemplary embodiments also provide a light emitting device for a displayand a display apparatus that is capable of increasing the productionyield.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

A light emitting device according to an exemplary embodiment includes afirst LED stack, a second LED stack disposed under the first LED stack,and a third LED stack disposed under the second LED stack, each of thefirst, second, and third LED stacks including a first conductivity typesemiconductor layer and a second conductivity type semiconductor layer,a first bonding layer interposed between the second LED stack and thethird LED stack, a second bonding layer interposed between the first LEDstack and the second LED stack, a first planarization layer interposedbetween the second bonding layer and the second LED stack, a secondplanarization layer disposed on the first LED stack, lower buried viaspassing through the first planarization layer, the second LED stack, andthe first bonding layer and electrically connected to the firstconductivity type semiconductor layer and the second conductivity typesemiconductor layer of the third LED stack, respectively, and upperburied vias passing through the second planarization layer and the firstLED stack, in which a width of an upper end of each of the lower buriedvias and the upper buried vias is greater than a width of acorresponding through hole.

The first, second, and third LED stacks may be configured to emit redlight, blue light, and green light, respectively.

The light emitting device may further include lower connectors coveringthe lower buried vias, in which at least one of the upper buried viasmay be connected to the lower connectors.

The lower buried vias may include a first lower buried via and a secondlower buried via, the upper buried vias may include a first upper buriedvia, a second upper buried via, a third upper buried via, and a fourthupper buried via, the first and second upper buried vias overlapping thewith first and second lower buried vias.

The light emitting device may further include a third lower connectorspaced apart from the lower buried vias and electrically connected tothe second conductivity type semiconductor layer of the second LEDstack, in which the third upper buried via may be electrically connectedto the third lower connector.

The first planarization layer may include a plurality of regions spacedapart from each other, one region of the first planarization layer maybe interposed between the second LED stack and the third lowerconnector, and the third lower connector may be electrically connectedto the second LED stack around the one region of the first planarizationlayer.

The lower buried vias may further include a third lower buried viapassing through the first planarization layer and the secondconductivity type semiconductor layer of the second LED stack, the thirdlower buried via being electrically connected to the first conductivitytype semiconductor layer of the second LED stack, and the third lowerburied via may be electrically connected to one of the lower connectors.

The first planarization layer may be continuously disposed on the secondLED stack.

The lower buried vias and the upper buried vias may be surrounded bysidewall insulation layers inside corresponding through holes,respectively.

The sidewall insulation layers may have a gradually decreasing thicknessas being closer to bottoms of the through holes.

The light emitting device may further include a first transparentelectrode in ohmic contact with the second conductivity typesemiconductor layer of the first LED stack, a second transparentelectrode in ohmic contact with the second conductivity typesemiconductor layer of the second LED stack, and a third transparentelectrode in ohmic contact with the second conductivity typesemiconductor layer of the third LED stack, in which the secondtransparent electrode may have openings exposing the second conductivitytype semiconductor layer of the second LED stack, and the lower buriedvias may be formed within the circumference of the openings of thesecond transparent electrode in a plan view.

The light emitting device may further include a plurality of upperconnectors disposed on the first LED stack, in which the upperconnectors may cover the upper buried vias to be electrically connectedto the upper buried vias, respectively.

The light emitting device may further include bump pads disposed on theupper connectors, respectively.

The bump pads may include a first bump pad commonly electricallyconnected to the first, second, and third LED stacks, and second, third,and fourth bump pads electrically connected to the second conductivitytype semiconductor layers of the first, second, and third LED stacks,respectively.

The light emitting device may further include a first electrode paddisposed on the first conductivity type semiconductor layer of the firstLED stack, in which one of the upper connectors electrically may connectthe upper buried via and the first electrode pad.

The upper connectors may include Au or an Au alloy.

Upper surfaces of the lower buried vias may be substantially flush withan upper surface of the first planarization layer, and upper surfaces ofthe upper buried vias may be substantially flush with an upper surfaceof the second planarization layer.

Each of the first, second, and third LED stacks may not include a growthsubstrate.

The light emitting device may further include a lower insulation layerinterposed between the third LED stack and the first bonding layer andcontacting the first bonding layer, and an intermediate insulation layerinterposed between the second LED stack and the second bonding layer andcontacting the second bonding layer.

A display apparatus according to another exemplary embodiment includes acircuit board, and a plurality of light emitting devices arranged on thecircuit board, each of the light emitting devices including a first LEDstack, a second LED stack disposed under the first LED stack, a thirdLED stack disposed under the second LED stack and including a firstconductivity type semiconductor layer and a second conductivity typesemiconductor layer, a first bonding layer interposed between the secondLED stack and the third LED stack, a second bonding layer interposedbetween the first LED stack and the second LED stack, a firstplanarization layer interposed between the second bonding layer and thesecond LED stack, a second planarization layer disposed on the first LEDstack, lower buried vias passing through the first planarization layer,the second LED stack, and the first bonding layer and electricallyconnected to the first conductivity type semiconductor layer and thesecond conductivity type semiconductor layer of the third LED stack,respectively, and upper buried vias passing through the secondplanarization layer and the first LED stack, in which a width of anupper end of each of the lower buried vias and the upper buried vias isgreater than that of a corresponding through hole.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 shows schematic perspective views of display apparatusesaccording to exemplary embodiments.

FIG. 2 is a schematic plan view of a display panel according to anexemplary embodiment.

FIG. 3 is a schematic plan view of a light emitting device according toan exemplary embodiment.

FIGS. 4A and 4B are schematic cross-sectional views taken along linesA-A′ and B-B′ of FIG. 3 , respectively.

FIGS. 5A, 5B, and 5C are schematic cross-sectional views of first,second, and third LED stacks grown on growth substrates, respectively,according to an exemplary embodiment.

FIGS. 6A, 6B, 6C, 7A, 7B, 7C, 8A, 8B, 8C, 9A, 9B, 9C, 10A, 10B, 10C,11A, 11B, 11C, 12A, 12B, 12C, 13A, 13B, 13C, 14A, 14B, 14C, 15A, 15B,15C, 16A, 16B, and 16C are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment.

FIGS. 17A, 17B, 17C, and 17D are schematic cross-sectional viewsillustrating a process of forming a buried via according to exemplaryembodiments.

FIG. 18 is a SEM image illustrating a via buried in a contact hole.

FIG. 19 is a SEM image illustrating a buried via.

FIG. 20 is a schematic plan view of a light emitting device according toanother exemplary embodiment.

FIGS. 21A and 21B are schematic cross-sectional views taken along linesC-C′ and D-D′ of FIG. 20 , respectively.

FIGS. 22A, 22B, 22C, 23A, 23B, 23C, 24A, 24B, 24C, 25A, 25B, 25C, 26A,26B, 26C, 27A, 27B, and 27C are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to another exemplary embodiment.

FIG. 28 is a schematic cross-sectional view of a light emitting devicemounted on a circuit board.

FIGS. 29A, 29B, and 29C are schematic cross-sectional views illustratinga method of transferring a light emitting device to a circuit boardaccording to an exemplary embodiment.

FIG. 30 is a schematic cross-sectional view illustrating a method oftransferring a light emitting device to a circuit board according toanother exemplary embodiment.

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

Hereinafter, exemplary embodiments of the inventive concepts will bedescribed in detail with reference to the accompanying drawings.

FIG. 1 shows schematic perspective views illustrating displayapparatuses according to exemplary embodiments.

A light emitting device according to an exemplary embodiment may be usedin a VR display apparatus, such as a smart watch 1000 a or a VR headset1000 b, or an AR display apparatus, such as augmented reality glasses1000 c, without being limited thereto.

A display panel for implementing an image may be mounted on a displayapparatus. FIG. 2 is a schematic plan view of a display panel accordingto an exemplary embodiment.

Referring to FIG. 2 , the display panel includes a circuit board 101 andlight emitting devices 100.

The circuit board 101 may include a circuit for passive matrix drivingor active matrix driving. In an exemplary embodiment, the circuit board101 may include interconnection lines and resistors therein. In anotherexemplary embodiment, the circuit board 101 may include interconnectionlines, transistors, and capacitors. The circuit board 101 may also havepads disposed on an upper surface thereof to allow electrical connectionto the circuit therein.

A plurality of light emitting devices 100 is arranged on the circuitboard 101. Each of the light emitting devices 100 may form one pixel.The light emitting device 100 includes bump pads 73, and the bump pads73 are electrically connected to the circuit board 101. For example, thebump pads 73 may be bonded to pads exposed on the circuit board 101.

An interval between the light emitting devices 100 may be greater thanat least a width of the light emitting device 100.

A configuration of the light emitting device 100 according to anexemplary embodiment will be described with reference to FIGS. 3, 4A,and 4B. FIG. 3 is a schematic plan view of the light emitting device 100according to an exemplary embodiment, and FIGS. 4A and 4B are schematiccross-sectional views taken along lines A-A′ and B-B′ of FIG. 3 ,respectively.

Hereinafter, although bump pads 73 a, 73 b, 73 c, and 73 d areexemplarily illustrated and described as being disposed at an upper sidein the drawings, the inventive concepts are not limited thereto. Forexample, in another exemplary embodiment, the light emitting device 100may be flip-bonded on the circuit board 101 shown in FIG. 2 . In thiscase, the bump pads 73 a, 73 b, 73 c, and 73 d may be disposed at alower side. Furthermore, in some exemplary embodiments, the bump pads 73a, 73 b, 73 c, and 73 d may be omitted. In addition, in other exemplaryembodiments, the substrate 41 may be omitted.

Referring to FIGS. 3, 4A and 4B, the light emitting device 100 mayinclude a first LED stack 23, a second LED stack 33, a third LED stack43, and a first transparent electrode 25, a second transparent electrode35, a third transparent electrode 45, a first n-electrode pad 27 a, asecond n-electrode pad 37 a, a third n-electrode pad 47 a, a lowerp-electrode pad 47 b, first, second, and third lower connectors 39 a, 39b, and 39 c, lower buried vias 55 a and 55 b, upper buried vias 65 a, 65b, 65 c, and 65 d, a first sidewall insulation layer 53, first, second,third, and fourth upper connectors 67 a, 67 b, 67 c, and 67 d, a firstbonding layer 49, a second bonding layer 59, a lower insulation layer48, an intermediate insulation layer 58, an upper insulation layer 71, alower planarization layer 51, an upper planarization layer 61, and bumppads 73 a, 73 b, 73 c, and 73 d. Furthermore, the light emitting device100 may include through holes 23 h 1, 23 h 2, 23 h 3, and 23 h 4 passingthrough the first LED stack 23, and through holes 33 h 1 and 33 h 2passing through the second LED stack 33.

As shown in FIGS. 4A and 4B, the first, second, and third LED stacks 23,33, and 43 according to an exemplary embodiment are stacked in thevertical direction. The first, second, and third LED stacks 23, 33, and43 may be grown on different growth substrates from each other.According to the illustrated exemplary embodiment, each of the growthsubstrates may be removed from the final light emitting device 100. Assuch, the light emitting device 100 does not include the growthsubstrates of the first, second, and third LED stacks 23, 33, and 43.However, the inventive concepts are not limited thereto, and in someexemplary embodiments, at least one of the growth substrates may beincluded in the light emitting device 100.

Hereinafter, the second LED stack is described as being disposed underthe first LED stack, and the third LED stack is described as beingdisposed under the second LED stack, however, in some exemplaryembodiments, the light emitting device may be flip-bonded. In this case,upper and lower positions of these first, second, and third LED stacksmay be reversed.

Each of the first LED stack 23, the second LED stack 33, and the thirdLED stack 43 includes a first conductivity type semiconductor layer 23a, 33 a, or 43 a, a second conductivity type semiconductor layer 23 b,33 b, or 43 b, and an active layer interposed therebetween. Inparticular, the active layer may have a multiple quantum well structure.

The second LED stack 33 is disposed under the first LED stack 23, andthe third LED stack 43 is disposed under the second LED stack 33. Lightgenerated in the first, second, and third LED stacks 23, 33, and 43 maybe emitted to the outside through the third LED stack 43.

In an exemplary embodiment, the first LED stack 23 may emit light havinga longer wavelength than those emitted from the second and third LEDstacks 33 and 43, and the second LED stack 33 may emit light having alonger wavelength than that emitted from the third LED stack 43. Forexample, the first LED stack 23 may be an inorganic light emitting diodeemitting red light, the second LED stack 33 may be an inorganic lightemitting diode emitting green light, and the third LED stack 43 may bean inorganic light emitting diode emitting blue light.

In another exemplary embodiment, to adjust a color mixing ratio of lightemitted from the first, second, and third LED stacks 23, 33, and 43, thesecond LED stack 33 may emit light having a shorter wavelength than thatemitted from the third LED stack 43. As such, luminous intensity oflight emitted from the second LED stack 33 may be reduced and luminousintensity of light emitted from the third LED stack 43 may be increased.In this manner, it is possible to dramatically change a luminousintensity ratio of light emitted from the first, second, and third LEDstacks 23, 33, and 43. For example, the first LED stack 23 may beconfigured to emit red light, the second LED stack 33 may be configuredto emit blue light, and the third LED stack 43 may be configured to emitgreen light.

Hereinafter, although the second LED stack 33 is exemplarily describedas emitting light having a shorter wavelength than that emitted from thethird LED stack 43, such as blue light, the inventive concepts are notlimited thereto. In some exemplary embodiments, the second LED stack 33may emit light of a longer wavelength than that emitted from of thethird LED stack 43, such as green light.

The first LED stack 23 may include an AlGaInP-based well layer, thesecond LED stack 33 may include an AlGaInN-based well layer, and thethird LED stack 43 may include an AlGaInP or AlGaInN-based well layer.

Since the first LED stack 23 emits light having a longer wavelength thanthat emitted from the second and third LED stacks 33 and 43, lightgenerated in the first LED stack 23 may be emitted to the outsidethrough the second and third LED stacks 33 and 43. In addition, sincethe second LED stack 33 emits light having a shorter wavelength thanthat emitted from the third LED stack 43, a portion of light generatedin the second LED stack 33 may be absorbed by the third LED stack 43 andlost, and thus, luminous intensity of light generated in the second LEDstack 33 may be reduced. Meanwhile, since light generated in the thirdLED stack 43 is emitted to the outside without passing through the firstand second LED stacks 23 and 33, luminous intensity thereof may beincreased.

The first conductivity type semiconductor layer 23 a, 33 a, or 43 a ofeach of the LED stacks 23, 33, and 43 may be an n-type semiconductorlayer, and the second conductivity type semiconductor layer 23 b, 33 bor 43 b thereof may be a p-type semiconductor layer. According to theillustrated exemplary embodiment, an upper surface of the first LEDstack 23 is an n-type semiconductor layer 23 b, an upper surface of thesecond LED stack 33 is a p-type semiconductor layer 33 b, and an uppersurface of the third LED stack 43 is a p-type semiconductor layer 43 b.As such, a stack sequence in the first LED stack 23 is reversed fromthose in the second LED stack 33 and the third LED stack 43. Thesemiconductor layers of the second LED stack 33 are stacked in the sameorder as the semiconductor layers of the third LED stack 43, and thus,process stability may be ensured. This will be described in detail laterwith reference to a manufacturing method.

The second LED stack 33 includes a mesa etching region, in which thesecond conductivity type semiconductor layer 33 b is removed to exposean upper surface of the first conductivity type semiconductor layer 33a. As shown in FIGS. 3 and 4B, the second n-electrode pad 37 a may bedisposed on the first conductivity type semiconductor layer 33 a exposedin the mesa etching region. The third LED stack 43 may also include amesa etching region, in which the second conductivity type semiconductorlayer 43 b is removed to expose an upper surface of the firstconductivity type semiconductor layer 43 a, and a third n-electrode pad47 may be disposed on the exposed first conductivity type semiconductorlayer 43 a. However, the first LED stack 23 may not include a mesaetching region.

The third LED stack 43 may have a flat lower surface, but the inventiveconcepts are not limited thereto. For example, the third LED stack 43may include irregularities on a surface of the first conductivity typesemiconductor layer 43 a, and light extraction efficiency may beimproved by the irregularities. The surface irregularities of the firstconductivity type semiconductor layer 43 a may be formed when separatinga patterned sapphire substrate, but may also be formed by texturingafter the growth substrate is removed therefrom. In some exemplaryembodiments, the second LED stack 33 may also have the firstconductivity type semiconductor layer 33 a having a textured surface.

In the illustrated exemplary embodiment, the first LED stack 23, thesecond LED stack 33, and the third LED stack 43 may be overlapped withone another, and may have a light emitting area of substantially similarsize. However, the light emitting areas of the first, second, and thirdLED stacks 23, 33, and 43 may be adjusted by the mesa etching region,the through holes 23 h 1, 23 h 2, 23 h 3, and 23 h 4, and the throughholes 33 h 1 and 33 h 2. For example, the light emitting areas of thefirst and third LED stacks 23 and 43 may be larger than that of thesecond LED stack 33, and thus, luminous intensity of light generated inthe first LED stack 23 or the third LED stack 43 may be furtherincreased compared to that of light generated in the second LED stack33.

The first transparent electrode 25 may be disposed between the first LEDstack 23 and the second LED stack 33. The first transparent electrode 25is in ohmic contact with the second conductivity type semiconductorlayer 23 b of the first LED stack 23 and transmits light generated inthe first LED stack 23. The first transparent electrode 25 may be formedusing a metal layer or a transparent oxide layer, such as indium tinoxide (ITO). The first transparent electrode 25 may cover an entiresurface of the second conductivity type semiconductor layer 23 b of thefirst LED stack 23, and a side surface thereof may be substantiallyflush with a side surface of the first LED stack 23. In particular, aside surface of the first transparent electrode 25 may not be coveredwith the second bonding layer 59. Furthermore, the through holes 23 h 1,23 h 2, and 23 h 3 may pass through the first transparent electrode 25,and thus, the first transparent electrode 25 may be exposed to sidewallsof the through holes 23 h 1, 23 h 2, and 23 h 3. Meanwhile, the throughhole 23 h 4 may expose an upper surface of the first transparentelectrode 25. However, the inventive concepts are not limited thereto,and in some exemplary embodiments, the first transparent electrode 25may be partially removed along an edge of the first LED stack 23, sothat the side surface of the first transparent electrode 25 may becovered with the second bonding layer 59. In addition, since the firsttransparent electrode 25 may be removed by patterning in advance in aregion where the through holes 23 h 1, 23 h 2, and 23 h 3 are formed,the first transparent electrode 25 may be prevented from being exposedto sidewalls of the through holes 23 h 1, 23 h 2, and 23 h 3.

The second transparent electrode 35 is in ohmic contact with the secondconductivity type semiconductor layer 33 b of the second LED stack 33.The second transparent electrode 35 contacts the upper surface of thesecond LED stack 33 between the first LED stack 23 and the second LEDstack 33. The second transparent electrode 35 may be formed of a metallayer or a conductive oxide layer that is transparent to red light. Theconductive oxide layer may include SnO₂, InO₂, ITO, ZnO, IZO, or thelike. In particular, the second transparent electrode 35 may be formedof ZnO, which may be formed as a single crystal on the second LED stack33 and has favorable electrical and optical characteristics as comparedwith the metal layer or other conductive oxide layers. Moreover, sinceZnO has a strong adhesion to the second LED stack 33, the light emittingdevice may have improved reliability.

The second transparent electrode 35 may be partially removed along anedge of the second LED stack 33, and accordingly, an outer side surfaceof the second transparent electrode 35 may not be exposed to theoutside, but covered with the intermediate insulation layer 58. Moreparticularly, the side surface of the second transparent electrode 35may be recessed inwardly than that of the second LED stack 33, and aregion where the second transparent electrode 35 is recessed may befilled with the intermediate insulation layer 58 and/or the secondbonding layer 59. Meanwhile, the second transparent electrode 35 mayalso be recessed near the mesa etching region of the second LED stack33, and the recessed region may be filled with the intermediateinsulation layer 58 or the second bonding layer 59.

The third transparent electrode 45 is in ohmic contact with the secondconductivity type semiconductor layer 43 b of the third LED stack 43.The third transparent electrode 45 may be disposed between the secondLED stack 33 and the third LED stack 43, and contacts the upper surfaceof the third LED stack 43. The third transparent electrode 45 may beformed of a metal layer or a conductive oxide layer that is transparentto red light and green light, for example. The conductive oxide layermay include SnO₂, InO₂, ITO, ZnO, IZO, or the like. In particular, thethird transparent electrode 45 may be formed of ZnO, which may be formedas a single crystal on the third LED stack 43 and has favorableelectrical and optical characteristics as compared with the metal layeror other conductive oxide layers. In addition, since ZnO has a strongadhesion to the third LED stack 43, the light emitting device may haveimproved reliability.

The third transparent electrode 45 may be partially removed along anedge of the third LED stack 43, and accordingly, an outer side surfaceof the third transparent electrode 45 may not be exposed to the outside,but covered with the lower insulation layer 48 or the first bondinglayer 49. More particularly, the side surface of the third transparentelectrode 45 may be recessed inwardly than that of the third LED stack43, and a region where the third transparent electrode 45 is recessedmay be filled with the lower insulation layer 48 and/or the firstbonding layer 49. Meanwhile, the third transparent electrode 45 may alsobe recessed near the mesa etching region of the third LED stack 43, andthe recessed region may be filled with the lower insulation layer 48 orthe first bonding layer 49.

The second transparent electrode 35 and the third transparent electrode45 are recessed as described above, and thus, the side surfaces of thesecond transparent electrode 35 and the third transparent electrode 45may be prevented from being exposed to an etching gas, thereby improvingthe production yield of the light emitting device 100.

According to an exemplary embodiment, the second transparent electrode35 and the third transparent electrode 45 may be include the sameconductive oxide layer, for example, ZnO, and the first transparentelectrode 25 may be formed of a different conductive oxide layer fromthe second and third transparent electrodes 35 and 45, such as ITO.However, the inventive concepts are not limited thereto, and in someexemplary embodiments, each of the first, second, and third transparentelectrodes 25, 35, and 45 may include the same material, or at least oneof the first, second, and third transparent electrodes 25, 35, and 45may include a different material.

The first n-electrode pad 27 a is in ohmic contact with the firstconductivity type semiconductor layer 23 a of the first LED stack 23.The first n-electrode pad 27 a may include, for example, AuGe or AuTe.

The second n-electrode pad 37 a is in ohmic contact with the firstconductivity type semiconductor layer 33 a of the second LED stack 33.The second n-electrode pad 37 a may be disposed on the firstconductivity type semiconductor layer 33 a exposed by mesa etching. Thesecond n-electrode pad 37 a may be formed of, for example, Cr/Au/Ti.

The third n-electrode pad 47 a is in ohmic contact with the firstconductivity type semiconductor layer 43 a of the third LED stack 43.The third n-electrode pad 47 a may be disposed on the first conductivitytype semiconductor layer 43 a exposed through the second conductivitytype semiconductor layer 43 b, that is, in the mesa etching region. Thethird n-electrode pad 47 a may be formed of, for example, Cr/Au/Ti. Anupper surface of the third n-electrode pad 47 a may be placed higherthan that of the second conductivity type semiconductor layer 43 b, andfurther, higher than that of the third transparent electrode 45. Forexample, a thickness of the third n-electrode pad 47 a may be about 2 μmor more. The third n-electrode pad 47 a may have a shape of a truncatedcone, but is not limited thereto. The third n-electrode pad 47 a inother exemplary embodiments may have various shapes, such as a squarepyramid, a cylindrical shape, or a cylindrical shape.

The lower p-electrode pad 47 b may include substantially the samematerial as the third n-electrode pad 47 a. An upper surface of thelower p-electrode pad 47 b may be located at substantially the sameelevation as the third n-electrode pad 47 a, and, accordingly, athickness of the lower p-electrode pad 47 b may be less than that of thethird n-electrode pad 47 a. More particularly, the thickness of thelower p-electrode pad 47 b may be approximately equal to a thickness ofa portion of the third n-electrode pad 47 a protruding above the thirdtransparent electrode 45. For example, the thickness of the lowerp-electrode pad 47 b may be about 1.2 μm or less. Since the uppersurface of the lower p-electrode pad 47 b is located at substantiallythe same elevation as that of the third n-electrode pad 47 a, the lowerp-electrode pad 47 b and the third n-electrode pad 47 a may besimultaneously exposed when the through holes 33 h 1 and 33 h 2 areformed. When the elevations of the third n-electrode pad 47 a and thelower p-electrode pad 47 b are different, any one of the electrode padsmay be damaged in the etching process. As such, the elevations of thethird n-electrode pad 47 a and the lower p-electrode pad 47 b are set tobe approximately equal, so as to prevent any one of the electrode padsfrom being damaged during the etching process or the like.

The lower insulation layer 48 covers the upper surface of the third LEDstack 43. The lower insulation layer 48 may also cover the thirdtransparent electrode 45, and may cover the third n-electrode pad 47 aand the lower p-electrode pad 47 b. The lower insulation layer 48 mayhave openings exposing the third n-electrode pad 47 a and the lowerp-electrode pad 47 b. The lower insulation layer 48 may protect thethird LED stack 43 and the third transparent electrode 45. Further, thelower insulation layer 48 may include a material capable of improvingadhesion to the first bonding layer 49, such as SiO₂. In some exemplaryembodiments, the lower insulation layer 48 may be omitted.

The first bonding layer 49 couples the second LED stack 33 to the thirdLED stack 43. The first bonding layer 49 may be disposed between thefirst conductivity type semiconductor layer 33 a and the thirdtransparent electrode 45. The first bonding layer 49 may contact thelower insulation layer 48, and may partially contact the thirdn-electrode pad 47 a and the lower p-electrode pad 47 b. When the lowerinsulation layer 48 is omitted, the first bonding layer 49 may partiallycontact the third transparent electrode 45 and the first conductivitytype semiconductor layer 43 a exposed in the mesa etching region.

The first bonding layer 49 may be formed of a transparent organicmaterial layer, or may be formed of a transparent inorganic materiallayer. For example, the organic material layer may include SUB, polymethylmethacrylate (PMMA), polyimide, parylene, benzocyclobutene (BCB),or the like, and the inorganic material layer may include Al₂O₃, SiO₂,SiN_(x), or the like. In addition, the first bonding layer 49 may beformed of spin-on-glass (SOG).

The first planarization layer 51 may be disposed on the second LED stack33. In particular, the first planarization layer 51 is disposed on anupper region of the second conductivity type semiconductor layer 33 band spaced apart from the mesa etching region. The first planarizationlayer 51 may be divided into a plurality of islands by patterning. Inthe illustrated exemplary embodiment, the first planarization layer 51is divided into three regions.

The through holes 33 h 1 and 33 h 2 may pass through the firstplanarization layer 51, the second LED stack 33, and the first bondinglayer 49, and expose the third n-electrode pad 47 a and the lowerp-electrode pad 47 b.

The first sidewall insulation layer 53 covers sidewalls of the throughholes 33 h 1 and 33 h 2 and has openings exposing bottoms of the throughholes 33 h 1 and 33 h 2. The first sidewall insulation layer 53 may beformed using, for example, a chemical vapor deposition technique or anatomic layer deposition technique, and may be formed of, for example,Al₂O₃, SiO₂, Si₃N₄, or the like.

The lower buried vias 55 a and 55 b may fill the through holes 33 h 1and 33 h 2, respectively. The lower buried vias 55 a and 55 b areinsulated from the second LED stack 33 by the first sidewall insulationlayer 53. The lower buried via 55 a may be electrically connected to thethird n-electrode pad 47 a, and the lower buried via 55 b may beelectrically connected to the lower p-electrode pad 47 b.

The lower buried vias 55 a and 55 b may be formed using a chemicalmechanical polishing technique. For example, after forming a seed layerand filling the through holes 33 h 1 and 33 h 2 with a conductivematerial such as Cu using a plating technique, the lower buried vias 55a and 55 b may be formed by removing metal layers on the firstplanarization layer 51 using the chemical mechanical polishingtechnique. As shown in FIGS. 4A and 4B, the lower buried vias 55 a and55 b may have a relatively wider width at inlets of the through holes 33h 1 and 33 h 2, and thus, the electrical connection may be strengthened.

The lower buried vias 55 a and 55 b may be formed together through thesame process. As such, upper surfaces of the lower buried vias 55 a and55 b may be substantially flush with the first planarization layer 51.However, the inventive concepts are not limited thereto, and the lowerburied vias may be formed through different processes from one another.A detailed process of forming the lower buried vias will be described inmore detail later.

The intermediate insulation layer 58 is formed on the second LED stack33 and covers the second transparent electrode 35, the firstplanarization layer 51, and the second n-electrode pad 37 a. Theintermediate insulation layer 58 may also cover the mesa etching regionof the second LED stack 33. The intermediate insulation layer 58 mayhave openings exposing the lower buried vias 55 a and 55 b and thesecond n-electrode pad 37 a. The intermediate insulation layer 58 may beformed of, for example, SiO₂. The intermediate insulation layer 58 mayprotect the second LED stack 33 and the second transparent electrode 35,and further, may improve adhesion of the second bonding layer 59.

The lower connectors 39 a, 39 b, and 39 c are disposed on each region ofthe first planarization layer 51. The first lower connector 39 a may beelectrically connected to the lower buried via 55 a, and may also extendin the lateral direction to be electrically connected to the secondn-electrode pad 37 a. As such, the first conductivity type semiconductorlayer 43 a of the third LED stack 43 and the first conductivity typesemiconductor layer 33 a of the second LED stack 33 may be commonlyelectrically connected. The first lower connector 39 a may cover thelower buried via 55 a.

The second lower connector 39 b is electrically connected to the lowerburied via 55 b. The second lower connector 39 b may cover the lowerburied via 55 b.

The third lower connector 39 c is electrically connected to the secondtransparent electrode 35. The third lower connector 39 c may be formedto surround the first planarization layer 51 as shown in FIG. 4A, andmay be connected to the second transparent electrode 35 along aperiphery of the first planarization layer 51. Since the third lowerconnector 39 c is disposed on the first planarization layer 51, anelevation of an upper end of the third lower connector 39 c may be setto be approximately equal to that of the first lower connector 39 a orthe second lower connector 39 b.

The second bonding layer 59 couples the first LED stack 23 to the secondLED stack 33. The second bonding layer 59 may be disposed between thefirst transparent electrode 25 and the intermediate insulation layer 58.The second bonding layer 59 may also cover the first, second, and thirdlower connectors 39 a, 39 b, and 39 c. The second bonding layer 59 mayinclude substantially the same material that forms the first bondinglayer 49 described above, and thus, repeated descriptions thereof willbe omitted to avoid redundancy.

The second planarization layer 61 covers the first LED stack 23. Unlikethe first planarization layer 51, the second planarization layer 61 maybe formed continuously. The second planarization layer 61 may be formedof an aluminum oxide film, a silicon oxide film, or a silicon nitridefilm. The second planarization layer 61 may have an opening exposing thefirst n-electrode pad 27 a.

The through holes 23 h 1, 23 h 2, 23 h 3, and 23 h 4 pass through thesecond planarization layer 61 and the first LED stack 23. Further, thethrough holes 23 h 1, 23 h 2, and 23 h 3 may pass through the firsttransparent electrode 25 and the second bonding layer 59 to expose thelower connectors 39 a, 39 b, and 39 c, and the through hole 23 h 4 mayexpose the first transparent electrode 25. For example, the through hole23 h 1 provides a passage for electrical connection to the lower buriedvia 55 a, the through hole 23 h 2 provides a passage for electricalconnection to the lower buried via 55 b, and the through hole 23 h 3provides a passage for electrical connection to the second transparentelectrode 35.

The through hole 23 h 4 provides a passage for electrical connection tothe first transparent electrode 25. The through hole 23 h 4 may not passthrough the first transparent electrode 25. However, the inventiveconcepts are not limited thereto, and in some exemplary embodiments, thethrough hole 23 h 4 may pass through the first transparent electrode 25as long as the through hole 23 h 4 provides the passage for electricalconnection to the first transparent electrode 25.

The second sidewall insulation layer 63 covers the sidewalls of thethrough holes 23 h 1, 23 h 2, 23 h 3, and 23 h 4, and has openingsexposing the bottoms of the through holes 23 h 1, 23 h 2, 23 h 3, and 23h 4. In the illustrated exemplary embodiment, the second sidewallinsulation layer 63 is not formed on a sidewall of an opening 61 a ofthe second planarization layer 61, but the inventive concepts are notlimited thereto. In some exemplary embodiments, the second sidewallinsulation layer 63 may also be formed on the sidewall of the opening 61a of the second planarization layer 61. The second sidewall insulationlayer 63 may be formed using, for example, a chemical vapor depositiontechnique or an atomic layer deposition technique, and may be formed of,for example, Al₂O₃, SiO₂, Si₃N₄, or the like.

The upper buried vias 65 a, 65 b, 65 c, and 65 d may fill the throughholes 23 h 1, 23 h 2, 23 h 3, and 23 h 4, respectively. The upper buriedvias 65 a, 65 b, 65 c, and 65 d are electrically insulated from thefirst LED stack 23 by the second sidewall insulation layer 63.

The upper buried via 65 a may be electrically connected to the lowerburied via 55 a through the first lower connector 39 a, the upper buriedvia 65 b may be electrically connected to the lower buried via 55 bthrough the second lower connector 39 b, and the upper buried via 65 cmay be electrically connected to the second transparent electrode 35through the third lower connector 39 c. Also, the upper buried via 65 dmay be electrically connected to the first transparent electrode 25.

The upper buried vias 65 a, 65 b, 65 c, and 65 d may be formed using achemical mechanical polishing technique. For example, after forming aseed layer and filling the through holes 23 h 1, 23 h 2, 23 h 3, and 23h 4 using a plating technique, the upper buried vias 65 a, 65 b, 65 c,and 65 d may be formed by removing metal layers on the secondplanarization layer 61 using the chemical mechanical polishingtechnique. Furthermore, a metal barrier layer may be formed beforeforming the seed layer.

The upper buried vias 65 a, 65 b, 65 c, and 65 d may be substantiallyflush with the second planarization layer 61 that may be formed togetherthrough the same process. However, the inventive concepts are notlimited thereto, and the upper buried vias 65 a, 65 b, 65 c, and 65 dmay be formed through different processes from each other.

The first upper connector 67 a, the second upper connector 67 b, thethird upper connector 67 c, and the fourth upper connector 67 d aredisposed on the second planarization layer 61. The first upper connector67 a may be electrically connected to the upper buried via 65 a, thesecond upper connector 67 b may be electrically connected to the upperburied via 65 b, the third upper connector 67 c may be electricallyconnected to the upper buried via 65 c, and the fourth upper connector67 d may be electrically connected to the upper buried via 65 d. Asshown, the first, second, third, and fourth upper connectors 67 a, 67 b,67 c, and 67 d may cover the upper buried vias 65 a, 65 b, 65 c, and 65d, respectively. The first upper connector 67 a may be electricallyconnected to the first n-electrode pad 27 a through the opening 61 a ofthe second planarization layer 61. As such, the first conductivity typesemiconductor layers 23 a, 33 a, 43 a of the first, second, and thirdLED stacks 23, 33, and 43 are commonly electrically connected to oneanother.

The first upper connector 67 a, the second upper connector 67 b, thethird upper connector 67 c, and the fourth upper connector 67 d may beformed of substantially the same material, for example, AuGe/Ni/Au/Ti,in the same process.

The upper insulation layer 71 may cover the first LED stack 23 and thesecond planarization layer 61, and may cover the first, second, third,and fourth upper connectors 67 a, 67 b, 67 c, and 67 d. The upperinsulation layer 71 may also cover the side surface of the firsttransparent electrode 25. The upper insulation layer 71 may haveopenings 71 a exposing the first upper connector 67 a, the second upperconnector 67 b, the third upper connector 67 c, and the fourth upperconnector 67 d. The openings 71 a of the upper insulation layer 71 maybe generally disposed on flat surfaces of the first upper connector 67a, the second upper connector 67 b, the third upper connector 67 c, andthe fourth upper connector 67 d. The upper insulation layer 71 may beformed of a silicon oxide film or a silicon nitride film, and may beformed to be thinner than the second planarization layer 61 to be about400 nm thick, without being limited thereto.

Each of the bump pads 73 a, 73 b, 73 c, and 73 d may be disposed on thefirst upper connector 67 a, the second upper connector 67 b, and thethird upper connector 67 c, and the fourth upper connector 67 d, and iselectrically connected thereto through the openings 71 a of the upperinsulation layer 71.

The first bump pad 73 a is electrically connected to the upper buriedvias 65 a and the first n-electrode pad 27 a through the first upperconnector 67 a, and accordingly, is commonly electrically connected tothe first conductivity type semiconductor layers 23 a, 33 a, 43 a of theLED stacks 23, 33, and 43.

The second bump pad 73 b may be electrically connected to the secondconductivity type semiconductor layer 43 b of the third LED stack 43through the second upper connector 67 b, the upper buried via 65 b, thesecond lower connector 39 b, the lower buried via 55 b, the lowerp-electrode pad 47 b, and the transparent electrode 45.

The third bump pad 73 c may be electrically connected to the secondconductivity type semiconductor layer 33 b of the second LED stack 33through the third upper connector 67 c, the upper buried via 65 c, thethird lower connector 39 c, and the second transparent electrode 35.

The fourth bump pad 73 d may be electrically connected to the secondconductivity type semiconductor layer 23 b of the first LED stack 23through the fourth upper connector 67 d and the first transparentelectrode 25.

As such, each of the second to fourth bump pads 73 b, 73 c, and 73 d maybe electrically connected to the second conductivity type semiconductorlayers 23 b, 33 b, and 43 b of the first, second, and third LED stacks23, 33, and 43, and the first bump pad 73 a may be commonly electricallyconnected to the first conductivity type semiconductor layers 23 a, 33a, and 43 a of the first, second, and third LED stacks 23, 33, and 43.

The bump pads 73 a, 73 b, 73 c, and 73 d may cover the openings 71 a ofthe upper insulation layer 71, and portions of the bump pads 73 a, 73 b,73 c, and 73 d may be disposed on the upper insulation layer 71.Alternatively, the bump pads 73 a, 73 b, 73 c, and 73 d may be disposedin the openings 71 a, and thus, upper surfaces of the bump pads may beflat.

The bump pads 73 a, 73 b, 73 c, and 73 d may be formed of Au/In. Forexample, Au may be formed to have a thickness of about 3 μm, and In maybe formed to have a thickness of about 1 μm. According to an exemplaryembodiment, the light emitting device 100 may be bonded to the pads onthe circuit board 101 using In. However, the inventive concepts are notlimited thereto, and in some exemplary embodiments, the light emittingdevice 100 may be bonded to the pads using Pb or AuSn of the bump pads.

According to the illustrated exemplary embodiment, the first LED stack23 is electrically connected to the bump pads 73 a and 73 d, the secondLED stack 33 is electrically connected to the bump pads 73 a and 73 c,and the third LED stack 43 is electrically connected to the bump pads 73a and 73 b. Accordingly, cathodes of the first LED stack 23, the secondLED stack 33, and the third LED stack 43 are commonly electricallyconnected to the first bump pad 73 a, and anodes thereof areelectrically connected to the second to fourth bump pads 73 b, 73 c, and73 d, respectively. Accordingly, the first, second, and third LED stacks23, 33, and 43 may be driven independently.

As described above, the light emitting device 100 according to theillustrated exemplary embodiment includes the bump pads 73 a, 73 b, 73c, and 73 d, but the inventive concepts are not limited thereto. In someexemplary embodiments, the bump pads may be omitted. In particular, whenthe light emitting device is bonded to the circuit board using ananisotropic conductive film or anisotropic conductive paste, the bumppads may be omitted, and upper connectors 67 a, 67 b, 67 c, and 67 d maybe directly bonded to the circuit board. As such, a bonding area may beincreased.

Hereinafter, a method of manufacturing the light emitting device 100will be described in detail. A structure of the light emitting device100 will also be described in more detail through the manufacturingmethod described below. FIGS. 5A, 5B, and 5C are schematiccross-sectional views of the first, second, and third LED stacks 23, 33,and 43 grown on growth substrates, respectively, according to anexemplary embodiment.

First, referring to FIG. 5A, a first LED stack 23 including a firstconductivity type semiconductor layer 23 a and a second conductivitytype semiconductor layer 23 b is grown on a first substrate 21. Anactive layer may be interposed between the first conductivity typesemiconductor layer 23 a and the second conductivity type semiconductorlayer 23 b.

The first substrate 21 may be a substrate capable of growing the firstLED stack 23 thereon, such as a GaAs substrate. The first conductivitytype semiconductor layer 23 a and the second conductivity typesemiconductor layer 23 b may be formed of an AlGaInAs-based orAlGaInP-based semiconductor layer, and the active layer may include, forexample, an AlGaInP-based well layer. A composition ratio of AlGaInP maybe determined so that the first LED stack 23 emits red light, forexample.

A first transparent electrode 25 may be formed on the secondconductivity type semiconductor layer 23 b. As described above, thefirst transparent electrode 25 may be formed of a metal layer or aconductive oxide layer that transmits light generated by the first LEDstack 23, for example, red light. The first transparent electrode 25 maybe formed of, for example, indium-tin oxide (ITO).

Referring to FIG. 5B, a second LED stack 33 including a firstconductivity type semiconductor layer 33 a and a second conductivitytype semiconductor layer 33 b is grown on a second substrate 31. Anactive layer may be interposed between the first conductivity typesemiconductor layer 33 a and the second conductivity type semiconductorlayer 33 b.

The second substrate 31 may be a substrate capable of growing the secondLED stack 33 thereon, such as a sapphire substrate, a SiC substrate, ora GaN substrate. In an exemplary embodiment, the second substrate 31 maybe a flat sapphire substrate, but may be a patterned sapphire substratein other exemplar embodiments. The first conductivity type semiconductorlayer 33 a and the second conductivity type semiconductor layer 33 b maybe formed of an AlGaInN-based semiconductor layer, and the active layermay include, for example, an AlGaInN-based well layer. A compositionratio of AlGaInN may be determined so that the second LED stack 33 emitsblue light, for example.

A second transparent electrode 35 may be formed on the secondconductivity type semiconductor layer 33 b. As described above, thesecond transparent electrode 35 may be formed of a metal layer or aconductive oxide layer that transmits light generated by the first LEDstack 23, for example, red light. In particular, the second transparentelectrode 35 may be formed of ZnO.

Referring to FIG. 5C, a third LED stack 43 including a firstconductivity type semiconductor layer 43 a and a second conductivitytype semiconductor layer 43 b is grown on a third substrate 41. Anactive layer may be interposed between the first conductivity typesemiconductor layer 43 a and the second conductivity type semiconductorlayer 43 b.

The third substrate 41 may be a substrate capable of growing the thirdLED stack 43 thereon, such as a sapphire substrate, a GaN substrate, ora GaAs substrate. The first conductivity type semiconductor layer 43 aand the second conductivity type semiconductor layer 43 b may be formedof an AlGaInAs-based or AlGaInP-based semiconductor layer, or anAlGaInN-based semiconductor layer, and the active layer may include, forexample, an AlGaInP-based well layer or AlGaInN-based well layer. Acomposition ratio of AlGaInP or AlGaInN may be determined so that thethird LED stack 43 emits green light, for example.

A third transparent electrode 45 may be formed on the secondconductivity type semiconductor layer 43 b. As described above, thethird transparent electrode 45 may be formed of a metal layer or aconductive oxide layer that transmits light generated in the first andsecond LED stacks 23 and 33, for example, red light and blue light. Inparticular, the third transparent electrode 45 may be formed of ZnO.

The first, second, and third LED stacks 23, 33, and 43 are grown on thedifferent growth substrates 21, 31, and 41, respectively. As such, theorder of manufacturing the first, second, and third LED stacks 23, 33,and 43 is not particularly limited.

Hereinafter, a method of manufacturing the light emitting device 100using first, second, and third LED stacks 23, 33, and 43 grown on growthsubstrates 21, 31, and 41 will be described. Hereinafter, although aregion of a single light emitting device 100 will be mainly illustratedand described, a plurality of light emitting devices 100 may bemanufactured in a batch in the same manufacturing process using the LEDstacks 23, 33, and 43 grown on the growth substrates 21, 31, and 41.

FIGS. 6A, 6B, 6C, 7A, 7B, 7C, 8A, 8B, 8C, 9A, 9B, 9C, 10A, 10B, 10C,11A, 11B, 11C, 12A, 12B, 12C, 13A, 13B, 13C, 14A, 14B, 14C, 15A, 15B,15C, 16A, 16B, and 16C are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to an exemplary embodiment. Lines A-A′ and B-B′along which the above cross-sectional views are taken correspond tolines A-A′ and B-B′ of FIG. 3 .

Referring to FIGS. 6A, 6B, and 6C, the third transparent electrode 45and the second conductivity type semiconductor layer 43 b of the thirdLED stack 43 are patterned to expose the first conductivity typesemiconductor layer 43 a using photo and etching techniques. Thisprocess corresponds to, for example, a mesa etching process. Aphotoresist pattern may be used as an etching mask. For example, afterthe etching mask is formed, the third transparent electrode 45 may beetched first by a wet etching technique, and then the secondconductivity type semiconductor layer 43 b may be etched by a dryetching technique using the same etching mask. In this manner, the thirdtransparent electrode 45 may be recessed from a mesa etching region.FIG. 6A exemplarily shows an edge of the mesa and does not show an edgeof the third transparent electrode 45 to simplify illustration. However,since the third transparent electrode 45 is wet etched using the sameetching mask, the edge of the third transparent electrode 45 may also berecessed from the edge of the mesa toward an inner side of the mesa.Since the same etching mask is used, the number of photo processes maynot be increased, thereby reducing the process costs. However, theinventive concepts are not limited thereto, and the etching mask foretching the mesa etching process may be different from the etching maskfor etching the third transparent electrode 45.

Subsequently, a third n-electrode pad 47 a and a lower p-electrode pad47 b are formed on the first conductivity type semiconductor layer 43 aand the third transparent electrode 45, respectively. The thirdn-electrode pad 47 a and the lower p-electrode pad 47 b may be formed tohave different thicknesses. In particular, an upper surface of the thirdn-electrode pad 47 a and that of the lower p-electrode pad 47 b may belocated at substantially the same elevation.

An isolation region for defining a light emitting device region may beformed. For example, the first conductivity type semiconductor layer 43a may be removed along the isolation region and an upper surface of thesubstrate 41 may be exposed.

Further, a lower insulation layer 48 may be formed on the third LEDstack 43. The lower insulation layer 48 may cover the exposed uppersurface of the substrate 41 and may cover upper and side surfaces of thethird transparent electrode 45 and the third LED stack 43. Further,openings exposing the third n-electrode pad 47 a and the lowerp-electrode pad 47 b may be formed in the lower insulation layer 48.

Referring to FIGS. 7A, 7B, and 7C, the second LED stack 33 shown in FIG.5B is bonded onto the third LED stack 43 described with reference toFIGS. 6A, 6B, and 6C. The second LED stack 33 is bonded to a temporarysubstrate using a temporary bonding/debonding (TBDB) technique, and thesecond substrate 31 is removed from the second LED stack 33. The secondsubstrate 31 may be removed using, for example, a laser lift offtechnique. After the second substrate 31 is removed, a roughened surfacemay be formed on a surface of the first conductivity type semiconductorlayer 33 a. Thereafter, the first conductivity type semiconductor layer33 a of the second LED stack 33 bonded to the temporary substrate may bedisposed to face the third LED stack 43 and bonded to the third LEDstack 43. The second LED stack 33 and the third LED stack 43 are bondedto each other by a first bonding layer 49. After bonding the second LEDstack 33 to the third LED stack 43, the temporary substrate may beremoved using the laser lift off technique. Accordingly, the second LEDstack 33 may be disposed on the third LED stack 43, in which the secondtransparent electrode 35 may form an upper surface.

Subsequently, openings 35 a and 35 b may be formed by patterning thesecond transparent electrode 35. The opening 35 a is disposed over thethird n-electrode pad 47 a, and the opening 35 b is disposed over thelower p-electrode pad 47 b. By forming the openings 35 a and 35 b inadvance, the second transparent electrode 35 may be prevented from beingexposed when forming the through holes 33 h 1 and 33 h 2 in subsequentprocess.

Referring to FIGS. 8A, 8B, and 8C, a first planarization layer 51 isformed on the second transparent electrode 35. The first planarizationlayer 51 may have a substantially flat upper surface, and may functionas an insulation layer.

Subsequently, through holes 33 h 1 and 33 h 2 passing through the firstplanarization layer 51, the second LED stack 33, and the first bondinglayer 49 are formed. The through holes 33 h 1 and 33 h 2 arerespectively formed within the circumference of the openings 35 a and 35b of the second transparent electrode 35 in a plan view, and thus, thesecond transparent electrode 35 is not exposed to sidewalls of thethrough holes 33 h 1 and 33 h 2. The through holes 33 h 1 and 33 h 2expose the third n-electrode pad 47 a and the lower p-electrode pad 47b, respectively.

A first sidewall insulation layer 53 is formed. The first sidewallinsulation layer 53 may be formed first to cover an upper portion of thefirst planarization layer 51 and sidewalls and bottom surfaces of thethrough holes 33 h 1 and 33 h 2. For example, the first sidewallinsulation layer 53 may be formed using a chemical vapor depositiontechnique or an atomic layer deposition technique.

Subsequently, the first sidewall insulation layer 53 is blanket etchedusing a dry etching technique. As such, the first sidewall insulationlayer 53 formed on the bottom of the through holes 33 h 1 and 33 h 2 isremoved to expose the third n-electrode pad 47 a and the lowerp-electrode pad 47 b. The first sidewall insulation layer 53 formed onthe first planarization layer 51 may be completely removed duringblanket etching, and a portion of the first planarization layer 51 nearinlets of the through holes 33 h 1 and 33 h 2 may also be removed. Assuch, the inlets of the through holes 33 h 1 and 33 h 2 may have a widerwidth than that of the bottom thereof. This will be described in detaillater with reference to FIGS. 17A to 17D.

Thereafter, lower buried vias 55 a and 55 b filling the through holes 33h 1 and 33 h 2 may be formed using a seed layer and a plating technique.The seed layer and the plating layer formed on the first planarizationlayer 51 may be removed using a chemical mechanical polishing technique.

Referring to FIGS. 9A, 9B, and 9C, the first planarization layer 51 maybe patterned to remove a portion of the first planarization layer 51,such that the retained first planarization layer 51 has an island shapein a plurality of regions. The first planarization layer 51 may beretained in regions where the lower buried vias 55 a and 55 b areformed, and a portion of the first planarization layer 51 may also beretained in a region where a lower connector 39 c connected to thesecond transparent electrode layer 35 is to be formed. In this manner,the upper surface of the second transparent electrode 35 is exposed bypatterning the first planarization layer 51.

Referring to FIGS. 10A, 10B, and 10C, the second transparent electrode35 and the second conductivity type semiconductor layer 33 b arepartially removed through mesa etching to expose the first conductivitytype semiconductor layer 33 a. The second transparent electrode 35 andthe second conductivity type semiconductor layer 33 b may be patternedby using photo and etching techniques. This process may be performedusing the wet etching and the dry etching techniques in substantiallythe same manner as the mesa etching process, during which the thirdtransparent electrode 45 and the second conductivity type semiconductorlayer 43 b are etched as described above.

For example, after the etching mask is formed, the second transparentelectrode 35 may be etched first by the wet etching technique, and thenthe second conductivity type semiconductor layer 33 b may be etched bythe dry etching technique using the same etching mask. Accordingly, thesecond transparent electrode 35 may be recessed from the mesa etchingregion. FIG. 11A exemplarily shows an edge of the mesa, and does notshow an edge of the second transparent electrode 35 to simplifyillustration. However, since the second transparent electrode 35 is wetetched using the same etching mask, the edge of the second transparentelectrode 35 may also be recessed from the edge of the mesa toward aninner side of the mesa. In this manner, since the same etching mask isused, the number of photo processes may not be increased, therebyreducing the process costs. However, the inventive concepts are notlimited thereto, and in some exemplary embodiments, the etching mask foretching the mesa etching process and the etching mask for etching thesecond transparent electrode 35 may be different from each other.

The mesa etching region of the second LED stack 33 may be partiallyoverlapped with that of the third LED stack 43, but the mesa etchingregions of the second LED stack 33 and the third LED stack 43 aregenerally separated from each other. In particular, a portion of themesa etching region of the second LED stack 33 may be spaced apart fromthe third n-electrode pad 47 a and the lower p-electrode pad 47 b in thelateral direction. A second n-electrode pad 37 a may be formed on thefirst conductivity type semiconductor layer 33 a exposed by mesaetching.

An intermediate insulation layer 58 may be formed on the second LEDstack 33. The intermediate insulation layer 58 may cover a portion ofthe first conductivity type semiconductor layer 33 a exposed by mesaetching. The intermediate insulation layer 58 may also cover the secondconductivity type semiconductor layer 33 b, the second transparentelectrode 35, the first planarization layer 51, and the secondn-electrode pad 37 a. The intermediate insulation layer 58 may haveopenings 58 a and 58 b exposing the lower buried vias 55 a and 55 b, andalso have an opening 58 d exposing the second n-electrode pad 37 a. Inaddition, the intermediate insulation layer 58 may have an opening 58 cexposing the first planarization layer 51 disposed apart from the lowerburied vias 55 a and 55 b and a surrounding region thereof.

Referring to FIGS. 11A, 11B, and 11C, lower connectors 39 a, 39 b, and39 c are formed on the first planarization layer 51. The first lowerconnector 39 a may be electrically connected to the lower buried via 55a and also extend in the lateral direction to be electrically connectedto the second n-electrode pad 37 a. The first lower connector 39 a maybe insulated from the second transparent electrode 35 and the secondconductivity type semiconductor layer 33 b by the intermediateinsulation layer 58.

Referring to FIGS. 12A, 12B, and 12C, an isolation region for defining alight emitting device region may be formed. For example, the firstconductivity type semiconductor layer 33 a may be removed along theisolation region, and an upper surface of the first bonding layer 49 maybe exposed. In some exemplary embodiments, an insulation layer coveringa side surface of the first conductivity type semiconductor layer 33 amay be added in addition to the intermediate insulation layer 58. Thisinsulation layer may be formed to have openings exposing the lowerconnectors 39 a, 39 b, and 39 c.

Referring to FIGS. 13A, 13B, and 13C, the first LED stack 23 describedwith FIG. 5A is bonded to the second LED stack 33. The first LED stack23 and the second LED stack 33 may be bonded using a second bondinglayer 59, so that the first transparent electrode 25 faces the secondLED stack 33. Accordingly, the second bonding layer 59 is in contactwith the first transparent electrode 25, and is also in contact with theintermediate insulation layer 58, and the lower connectors 39 a, 39 b,and 39 c.

A first substrate 21 is removed from the first LED stack 23. The firstsubstrate 21 may be removed using, for example, an etching technique.After the first substrate 21 is removed, a first n-electrode pad 27 amay be formed on a portion of a region of the first conductivity typesemiconductor layer 23 a. The first n-electrode pad 27 a may be formedto be in ohmic contact with the first conductivity type semiconductorlayer 23 a.

Referring to FIGS. 14A, 14B, and 14C, a second planarization layer 61covering the first LED stack 23 and the first n-electrode pad 27 a isformed. The second planarization layer 61 is formed to have asubstantially flat upper surface.

Subsequently, through holes 23 h 1, 23 h 2, 23 h 3, and 23 h 4 passingthrough the second planarization layer 61 and the first LED stack 23 areformed. The through holes 23 h 1, 23 h 2, and 23 h 3 may pass throughthe first transparent electrode 25 and the second bonding layer 59 toexpose the lower connectors 39 a, 39 b, and 39 c, respectively. Thethrough hole 23 h 4 may expose the first transparent electrode 25.

The through holes 23 h 1, 23 h 2, and 23 h 3 may be formed togetherthrough the same process, and the through hole 23 h 4 may be formedthrough a process different from that of forming the through holes 23 h1, 23 h 2, and 23 h 3.

Subsequently, a second sidewall insulation layer 63 and upper buriedvias 65 a, 65 b, 65 c, and 65 d are formed. Since a process of formingthe second sidewall insulation layer 63 and the upper buried vias 65 a,65 b, 65 c, and 65 d is substantially similar to that of forming thefirst sidewall insulation layer 53 and the lower buried vias 55 a and 55b, repeated descriptions thereof will be omitted.

Referring to FIGS. 15A, 15B, and 15C, an opening 61 a exposing the firstn-electrode pad 27 a is formed by patterning the second planarizationlayer 61. The second planarization layer 61 may be patterned using photoand etching techniques.

Subsequently, upper connectors 67 a, 67 b, 67 c, and 67 d are formed.The upper connectors 67 a, 67 b, 67 c, and 67 d may include a reflectivemetal layer, and thus, light generated in the first LED stack 23 may bereflected to improve light extraction efficiency. For example, the upperconnectors 67 a, 67 b, 67 c, and 67 d may include Au or an Au alloy.

The upper connector 67 a may electrically connect the upper buried via65 a to the first n-electrode pad 27 a. The upper connectors 67 b, 67 c,and 67 d may be connected to the upper buried vias 65 b, 65 c, and 65 d,respectively.

Referring to FIGS. 16A, 16B, and 16C, the second planarization layer 61,the first LED stack 23, and the first transparent electrode 25 may beetched along the isolation region. For example, the second planarizationlayer 61 may be patterned in advance, and then, the first LED stack 23and the first transparent electrode 25 may be patterned to divide thelight emitting device regions. The second planarization layer 61 may bepatterned in advance along the isolation region when forming the opening61 a. As such, an upper surface of the second bonding layer 59 may beexposed.

Thereafter, an upper insulation layer 71 is formed. The upper insulationlayer 71 may cover the first transparent electrode 25, the first LEDstack 23, the second planarization layer 61, and further, cover theupper connectors 67 a, 67 b, 67 c, and 67 d. Moreover, the upperinsulation layer 71 may be patterned to have openings 71 a exposing theupper connectors 67 a, 67 b, 67 c, and 67 d.

Subsequently, bump pads 73 a, 73 b, 73 c, and 73 d covering the openings71 a may be formed. The first bump pad 73 a is disposed on the firstupper connector 67 a, the second bump pad 73 b is disposed on the secondupper connector 67 b, and the third bump pad 73 c is disposed on thethird upper connector 67 c. The fourth bump pad 73 d is disposed on thefourth upper connector 67 d.

Thereafter, a plurality of light emitting devices 100 separated from oneanother is formed on the substrate 41 by removing the first and secondbonding layers 49 and 59 along the isolation region, and the lightemitting device 100 separated from the substrate 41 is provided bybonding the light emitting device 100 onto a circuit board 101 andseparating the substrate 41. A schematic cross-sectional view of thelight emitting device 100 bonded to the circuit board 101 is exemplarilyshown in FIG. 28 , which will be described in detail later.

The light emitting device 100 according to an exemplary embodimentachieve electrical connection using buried vias 55 a, 55 b, 65 a, 65 b,65 c, and 65 d. Hereinafter, a process of forming the buried vias willbe described in more detail.

FIGS. 17A, 17B, 17C, and 17D are schematic cross-sectional viewsillustrating a process of forming a buried via according to exemplaryembodiments.

First, referring to FIG. 17A, a planarization layer 51 or 61 is formedon an underlying layer S. The underlying layer S may include a first LEDstack 23 or a second LED stack 33. A hard mask defining an etchingregion is formed by patterning the planarization layer 51 or 61, and athrough hole H may be formed using the hard mask as an etching mask. Thethrough hole H may expose an element for electrical connection, forexample, the third n-electrode pad 47 a, the lower p-electrode pad 47 b,or the lower connectors 39 a, 39 b, and 39 c.

Referring to FIG. 17B, subsequently, a sidewall insulation layer 53 or63 is formed. The sidewall insulation layer 53 or 63 may be formed on anupper surface of the planarization layer 51 or 61, and further, may beformed on a sidewall and a bottom of the through hole H. The sidewallinsulation layer 53 or 63 may be formed thicker at an inlet than at thebottom of the through hole H due to characteristics of layer coverage.

Referring to FIG. 17C, the sidewall insulation layer 53 or 63 is blanketetched using a dry etching technique. The sidewall insulation layerdisposed on the bottom of the through hole H is removed by blanketetching, and the sidewall insulation layer disposed on the upper surfaceof the planarization layer 51 or 61 is also removed. Further, a portionof the planarization layer 51 or 61 near the inlet of the through hole Hmay also be removed. As such, a width W2 of the inlet may be greaterthan a width W1 of the through hole H. Since the width W2 of the inletis increased, the subsequent process of forming a buried via using aplating technology may be facilitated.

Referring to FIG. 17D, a seed layer may be formed in the planarizationlayer 51 or 61 and the through hole H, and a plating layer filling thethrough hole H may be formed using a plating technique. Subsequently, byremoving the plating layer and the seed layer on the planarization layer51 or 61 using a chemical etching technique, a buried via 55 or 65 asshown in FIG. 17D may be formed.

FIG. 18 is a SEM image illustrating a via buried in a contact hole. FIG.18 shows an image, after the through hole H was formed and then theburied via was formed as described with reference to FIGS. 17A to 17D,but before the plating layer on the upper surface of the planarizationlayer is removed using a chemical mechanical polishing technique.

Referring to FIG. 18 , it can be seen that the through hole is wellburied by the plating layer. Further, it can be seen that the width W2of the inlet of the through hole is wider than the width W1 of thethrough hole, and it can also be seen that a thickness of the sidewallinsulation layer becomes thinner as being closer to the bottom of thethrough hole.

FIG. 19 is a SEM image illustrating a buried via formed using a chemicalmechanical polishing technique. FIG. 19 shows a shape of the buried viaafter removing the seed layer and the plating layer using the chemicalmechanical polishing technique, after forming a hole in a siliconsubstrate, depositing the sidewall insulation layer, and forming theseed layer and the plating layer. In this case, the buried via wasformed without blanket etching the sidewall insulation layer.

Referring to FIG. 19 , it can be seen that an upper surface of theburied via is flush with an upper surface of the sidewall insulationlayer surrounding the buried via, and thus, the buried via may be formedin the through hole using the chemical mechanical polishing technique.

FIG. 20 is a schematic plan view illustrating a light emitting device200 according to another exemplary embodiment, and FIGS. 21A and 21B areschematic cross-sectional views taken along lines C-C′ and D-D′ of FIG.20 , respectively.

Referring to FIGS. 20, 21A, and 21B, the light emitting device 200according to the illustrated exemplary embodiment is substantiallysimilar to the light emitting device 100 described above, except that afirst planarization layer 151 is formed continuously, unlike the firstplanarization layer 51 of the light emitting device 100 that is dividedin to multiple regions to have an island shape. As such, the second LEDstack 33 does not have a mesa etching region exposing the firstconductivity type semiconductor layer 33 a, and the second n-electrodepad 37 a shown in FIG. 4B that is in ohmic contact with the firstconductivity type semiconductor layer 33 a is omitted.

A through hole 33 h 3 exposing the first conductivity type semiconductorlayer 33 a is formed passing through the first planarization layer 151and the second conductivity type semiconductor layer 33 b, and the lowerburied via 55 c fills the through hole 33 h 3. The lower connector 39 acommonly electrically connects the first conductivity type semiconductorlayers 33 a and 43 a by electrically connecting the lower buried via 55a and the lower buried via 55 c.

The second transparent electrode 35 may be patterned in advance so asnot to be exposed to the sidewalls of the through holes 33 h 1, 33 h 2,and 33 h 3 while covering the upper surface of the second conductivitytype semiconductor layer 33 b. For example, the second transparentelectrode 35 may be patterned to have openings in regions where thethrough holes 33 h 1, 33 h 2, and 33 h 3 are to be formed before formingthe first planarization layer 151.

In the illustrated exemplary embodiment, the upper p-electrode pad 37 bmay be disposed on the second transparent electrode 35, and the lowerconnector 39 c may be electrically connected to the upper p-electrodepad 37 b. The first planarization layer 151 may have an opening exposingthe upper p-electrode pad 37 b to allow electrical connection of thelower connector 39 c.

In the illustrated exemplary embodiment, the intermediate insulationlayer 58 is omitted, but the inventive concepts are not limited thereto.For example, in some exemplary embodiments, an intermediate insulationlayer covering the second LED stack 33, the first planarization layer151, and the lower connectors 39 a, 39 b, and 39 c may be added. Theintermediate insulation layer may have openings exposing the lowerconnectors 39 a, 39 b, and 39 c to allow electrical connection of theupper buried vias 65 a, 65 b, and 65 c.

According to the illustrated exemplary embodiment, the lower connector39 a may be formed on a flat surface of the first planarization layer151 by continuously forming the first planarization layer 151 andforming the lower buried via 55 c.

FIGS. 22A, 22B, 22C, 23A, 23B, 23C, 24A, 24B, 24C, 25A, 25B, 25C, 26A,26B, 26C, 27A, 27B, and 27C are schematic plan views and cross-sectionalviews illustrating a method of manufacturing a light emitting device fora display according to another exemplary embodiment. Lines C-C′ and D-D′along which the cross-sectional views are taken correspond to lines C-C′and D-D′ of FIG. 20 .

First, as described above with reference to FIGS. 5A, 5B, and 5C, afirst LED stack 23, a second LED stack 33, and a third LED stack 43 aregrown on substrates 21, 31 and 41, respectively, and transparentelectrodes 25, 35 and 45 are formed.

Subsequently, referring to FIGS. 22A, 22B, and 22C, as described abovewith reference to FIGS. 6A, 6B, and 6C, a first conductivity typesemiconductor layer 43 a is exposed through a mesa etching process, anda third n-electrode pad 47 a and a lower p-electrode pad 47 b are formedon the first conductivity type semiconductor layer 43 a and a thirdtransparent electrode 45, respectively. In addition, an isolation regionfor defining a light emitting device region may be formed, and a lowerinsulation layer 48 may be formed.

Referring to FIGS. 23A, 23B, and 23C, as described above with referenceto FIGS. 6A, 6B, and 6C, first, the second LED stack 33 described withreference to FIG. 5B is bonded on the third LED stack 43.

Subsequently, openings 35 a, 35 b, and 35 c exposing the secondconductivity type semiconductor layer 33 b may be formed by patterning asecond transparent electrode 35. The opening 35 a is disposed over thethird n-electrode pad 47 a, and the opening 35 b is disposed over thelower p-electrode pad 47 b. In the illustrated exemplary embodiment, amesa etching process for exposing the first conductivity typesemiconductor layer 33 a is omitted. However, an opening 35 c is addedin the upper region where the second n-electrode pad 37 a is formed inFIG. 10C. In addition, the second transparent electrode 35 may beremoved in advance along the isolation region and may be separated inunits of the light emitting device 200 region.

Further, an upper p-electrode pad 37 b is formed on the secondtransparent electrode 35. The upper p-electrode pad 37 b may be in ohmiccontact with the second transparent electrode 35. In another exemplaryembodiment, the upper p-electrode pad 37 b may be omitted.

Referring to FIGS. 24A, 24B, and 24C, a first planarization layer 151covering the second transparent electrode 35 is formed. The firstplanarization layer 151 covers an upper p-electrode pad 27 b and coversthe openings 35 a, 35 b, and 35 c.

Subsequently, through holes 33 h 1 and 33 h 2 passing through the firstplanarization layer 151, the second LED stack 33, and the first bondinglayer 49, and a through hole 33 h 3 passing through the firstplanarization layer 151 and the second conductivity type semiconductorlayer 33 b to expose the first conductivity type semiconductor layer 33a are formed. The through holes 33 h 1 and 33 h 2 are respectivelyformed within the circumference of the openings 35 a and 35 b of thesecond transparent electrode 35 in a plan view, and the through hole 33h 3 is formed withing the circumference of the opening 35 c of thesecond transparent electrode 35 in a plan view.

Thereafter, a first sidewall insulation layer 53 and lower buried vias55 a, 55 b, and 55 c may be formed. The lower buried vias 55 a and 55 bare substantially the same as those described with reference to FIGS.8A, 8B, and 8C, and thus, repeated descriptions thereof will be omitted.Meanwhile, the lower buried via 55 c is electrically connected to thefirst conductivity type semiconductor layer 33 a.

Referring to FIGS. 25A, 25B, and 25C, lower connectors 39 a, 39 b, and39 c are formed on the first planarization layer 151. The first lowerconnector 39 a may be electrically connected to the lower buried via 55a and extend in the lateral direction to be also electrically connectedto the lower buried via 55 c. The first lower connector 39 a may beinsulated from the second transparent electrode 35 and the secondconductivity type semiconductor layer 33 b by the first planarizationlayer 151.

In the illustrated exemplary embodiment, the third lower connector 39 cmay be electrically connected to the upper p-electrode pad 37 b exposedthrough an opening of the first planarization layer 151. The firstplanarization layer 151 may be patterned in advance to expose the upperp-electrode pad 37 b. When the upper p-electrode pad 37 b is omitted inother exemplary embodiments, the third lower connector 39 c may bedirectly connected to the second transparent electrode 35.

The first planarization layer 151 may also be removed along theisolation region, and thus, the second conductivity type semiconductorlayer 33 b may be exposed as shown in FIGS. 25B and 25C.

Referring to FIGS. 26A, 26B, and 26C, an isolation region for defining alight emitting device region may be formed. For example, the secondconductivity type semiconductor layer 33 b and the first conductivitytype semiconductor layer 33 a may be removed along the isolation region,and an upper surface of the first bonding layer 49 may be exposed. Insome exemplary embodiments, an insulation layer covering the second LEDstack 33, the first planarization layer 151, and the lower connectors 39a, 39 b, and 39 c may be added. This insulation layer may be formed tohave openings exposing the lower connectors 39 a, 39 b, and 39 c.

Referring to FIGS. 27A, 27B, and 27C, the first LED stack 23 describedin FIG. 5A is bonded to the second LED stack 33, and through the sameprocess as described with reference to FIGS. 13A, 13B, 13C, 14A, 14B,14C, 15A, 15B, 15C, 16A, 16B, and 16C, a first n-electrode pad 27 a, asecond planarization layer 61, upper buried vias 65 a, 65 b, 65 c, and65 d, upper connectors 67 a, 67 b, 67 c, and 67 d, an upper insulationlayer 71, and bump pads 73 a, 73 b, 73 c, and 73 d are formed. Sincethese processes are substantially the same as those described above withreference to FIGS. 13A to 16C, repeated description thereof will beomitted.

Subsequently, a plurality of light emitting devices 200 separated fromone another is formed on a substrate 41 by removing the first and secondbonding layers 49 and 59 along the isolation region, and the lightemitting device 200 separated from the substrate 41 is provided bybonding the light emitting device 100 onto a circuit board 101 andseparating the substrate 41.

Although FIG. 28 exemplarily illustrates a single light emitting device100 disposed on the circuit board 101, however, a plurality of lightemitting devices 100 may be mounted on the circuit board 101. Each ofthe light emitting devices 100 may form one pixel capable of emittingany one of blue light, green light, and red light, and a plurality ofpixels is arranged on the circuit board 101 to provide a display panel.FIG. 28 exemplarily illustrates the light emitting device 100, but thelight emitting device 200 may be disposed in other exemplaryembodiments.

The plurality of light emitting devices 100 may be formed on thesubstrate 41, and the light emitting devices 100 may be transferred ontothe circuit board 101 in a group, rather than individually. FIGS. 29A,29B, and 29C are schematic cross-sectional views illustrating a methodof transferring the light emitting device to the circuit board accordingto an exemplary embodiment. Hereinafter, a method of transferring thelight emitting devices 100 or 200 formed on the substrate 41 to thecircuit board 101 in a group will be described.

Referring to FIG. 29A, as described in FIGS. 16A, 16B, and 16C, when themanufacturing process of the light emitting device 100 on the substrate41 is completed, the plurality of light emitting devices 100 is isolatedfrom each other, and arranged on the substrate 41 by an isolationtrench.

The circuit board 101 having pads on an upper surface thereof isprovided. The pads are arranged on the circuit board 101 to correspondto locations where the pixels for a display are to be arranged. Ingeneral, an interval between the light emitting devices 100 arranged onthe substrate 41 may be denser than that of the pixels on the circuitboard 101.

Referring to FIG. 29B, bump pads of the light emitting devices 100 areselectively bonded to the pads of the circuit board 101. The bump padsand the pads may be bonded using solder bonding or In bonding, forexample. In this case, the light emitting devices 100 located betweenpixel regions may be spaced apart from the circuit board 101, sincethese light emitting devices 100 do not have pads of the circuit board101 to be boned to.

Subsequently, the substrate 41 is irradiated with a laser. The laser isselectively irradiated onto the light emitting devices 100 bonded to thepads. To this end, a mask having openings for selectively exposing thelight emitting devices 100 may be formed on the substrate 41.

Thereafter, the light emitting devices 100 are transferred to thecircuit board 101 by separating the light emitting devices 100irradiated with the laser from the substrate 41. Accordingly, as shownin FIG. 29C, the display panel in which the light emitting devices 100are arranged on the circuit board 101 is provided. The display panel maybe mounted on various display apparatuses as described with reference toFIG. 1 .

FIG. 30 is a schematic cross-sectional view illustrating a method oftransferring a light emitting device according to another exemplaryembodiment.

Referring to FIG. 30 , light emitting devices according to theillustrated exemplary embodiment are bonded to pads using an anisotropicconductive adhesive film or an anisotropic conductive adhesive paste. Inparticular, an anisotropic conductive adhesive film or adhesive paste121 may be provided on the pads, and the light emitting devices 100 maybe adhered to the pads through the anisotropic conductive adhesive filmor adhesive paste 121. The light emitting devices 100 are electricallyconnected to the pads by the anisotropic conductive adhesive film or aconductive material in the adhesive paste 121.

In the illustrated exemplary embodiment, bump pads 73 a, 73 b, 73 c, and73 d may be omitted, and upper connectors 67 a, 67 b, 67 c, and 67 d maybe electrically connected to the pads through a conductive material.

According to exemplary embodiments, the first, second, and third LEDstacks are stacked one above another, and thus, the light emittingdevice may have an increased luminous area of each sub-pixel withoutincreasing a pixel area. Furthermore, since the widths of the upper endsof the buried vias are increased, electrical connection of the buriedvias may be facilitated.

The light emitting device according to exemplary embodiments may furtherinclude lower connectors covering the lower buried vias, in whichportions of the upper buried vias may be connected to the lowerconnectors. The lower connectors may enhance electrical connection ofthe upper buried vias, and reliability of a process of forming the upperburied vias may be improved.

According to exemplary embodiments, the lower buried vias and portionsof the upper buried vias are overlapped, which may reduce light loss dueto the buried vias.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A light emitting module, comprising: a circuitboard; and a lighting emitting device disposed on the circuit board, thelight emitting device comprising: a first LED stack, a second LED stackdisposed under the first LED stack, and a third LED stack disposed underthe second LED stack, each of the first, second, and third LED stacksincluding a first conductivity type semiconductor layer and a secondconductivity type semiconductor layer; a first bonding layer interposedbetween the second LED stack and the third LED stack; a second bondinglayer interposed between the first LED stack and the second LED stack; afirst planarization layer interposed between the second bonding layerand the third LED stack; a second planarization layer disposed on thefirst LED stack; a lower conductive material extending along sides ofthe first planarization layer, the second LED stack, and the firstbonding layer, and electrically connected to the first conductivity typesemiconductor layers of each of the first, second, and third LED stacks,respectively; and an upper conductive material disposed between thecircuit board and the lower conductive material, wherein a width of anupper end of the upper conductive material is greater than a width ofthe corresponding upper conductive material.
 2. The light emittingmodule of claim 1, wherein the upper end of the upper conductivematerial faces the circuit board.
 3. The light emitting module of claim1, wherein the upper conductive material overlaps the lower conductivematerial and is electrically connected to the lower conductive material.4. The light emitting module of claim 1, wherein at least one of thelower conductive material and the upper conductive material passesthrough the second planarization layer.
 5. The light emitting module ofclaim 1, wherein the upper conductive material extends along sides ofthe second planarization layer, the first LED stack, and the secondbonding layer.
 6. The light emitting module of claim 1, wherein at leasta portion of the third LED stack is exposed from the first planarizationlayer in a plan view.
 7. The light emitting module of claim 1, whereinthe first, second, and third LED stacks are configured to emit redlight, blue light, and green light, respectively.
 8. The light emittingmodule of claim 1, wherein the first bonding layer comprises at leastone of SU8, poly methylmethacrylate (PMMA), polyimide, parylene, andbenzocyclobutene (BCB).
 9. The light emitting module of claim 1, whereinthe second planarization layer comprises at least one of an aluminumoxide film, a silicon oxide film, and a silicon nitride film.
 10. Thelight emitting module of claim 1, wherein at least one surface of thelight emitting device is formed with irregularities.
 11. A lightemitting module, comprising: a circuit board; and a lighting emittingdevice disposed on the circuit board, the light emitting devicecomprising: a first LED stack, a second LED stack disposed under thefirst LED stack, and a third LED stack disposed under the second LEDstack, each of the first, second, and third LED stacks including a firstconductivity type semiconductor layer and a second conductivity typesemiconductor layer; a first bonding layer interposed between the secondLED stack and the third LED stack; a second bonding layer interposedbetween the first LED stack and the second LED stack; a firstplanarization layer interposed between the second bonding layer and thethird LED stack; a second planarization layer disposed on the first LEDstack; a lower conductive material extending along sides of the firstplanarization layer, the second LED stack, and the first bonding layer,and electrically connected to the first conductivity type semiconductorlayers of each of the first, second, and third LED stacks, respectively;and an upper conductive material disposed between the circuit board andthe lower conductive material, wherein an upper end of the upperconductive material has an inclined surface.
 12. The light emittingmodule of claim 11, wherein the upper end of the upper conductivematerial faces the circuit board.
 13. The light emitting module of claim11, wherein the upper conductive material overlaps the lower conductivematerial and is electrically connected to the lower conductive material.14. The light emitting module of claim 11, wherein at least one of thelower conductive material and the upper conductive material passesthrough the second planarization layer.
 15. The light emitting module ofclaim 1, wherein the upper conductive material extends along sides ofthe second planarization layer, the first LED stack, and the secondbonding layer.
 16. A light emitting device, comprising: a first LEDstack, a second LED stack disposed under the first LED stack, and athird LED stack disposed under the second LED stack, each of the first,second, and third LED stacks including a first conductivity typesemiconductor layer and a second conductivity type semiconductor layer;a first bonding layer interposed between the second LED stack and thethird LED stack; a second bonding layer interposed between the first LEDstack and the second LED stack; a first planarization layer interposedbetween the second bonding layer and the third LED stack; a secondplanarization layer disposed on the first LED stack; a lower conductivematerial extending along sides of the first planarization layer, thesecond LED stack, and the first bonding layer, and electricallyconnected to the first conductivity type semiconductor layers of each ofthe first, second, and third LED stacks, respectively; and an upperconductive material electrically connected to the lower conductivematerial, wherein an upper end of the upper conductive material has aninclined surface.
 17. The light emitting device of claim 16, wherein theupper end of the upper conductive material faces away from the third LEDstack.
 18. The light emitting device of claim 16, wherein the upperconductive material is disposed on the lower conductive material andoverlaps the lower conductive material.
 19. The light emitting device ofclaim 16, wherein at least one of the lower conductive material and theupper conductive material passes through the second planarization layer.20. The light emitting device of claim 16, wherein the upper conductivematerial extends along sides of the second planarization layer, thefirst LED stack, and the second bonding layer.